Download E-books Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications (Springer Series in Advanced Microelectronics) PDF

February 1, 2017 | Electricity | By admin | 0 Comments

Due to the ever expanding electrical fields in scaled CMOS units, reliability is changing into a showstopper for extra scaled expertise nodes. even if numerous teams have already confirmed useful Si channel units with aggressively scaled an identical Oxide Thickness (EOT) right down to 5Å, a ten yr trustworthy machine operation can't be assured anymore because of critical detrimental Bias Temperature Instability.

This ebook makes a speciality of the reliability of the radical (Si)Ge channel quantum good pMOSFET know-how. This expertise is being thought of for attainable implementation in subsequent CMOS expertise nodes, because of its profit when it comes to service mobility and equipment threshold voltage tuning. We notice that it additionally opens a level of freedom for gadget reliability optimization. by way of effectively tuning the gadget gate stack, sufficiently trustworthy ultra-thin EOT units with a ten years lifetime at working stipulations are demonstrated.

The huge experimental datasets accrued on quite a few processed 300mm wafers and offered right here express the reliability development to be approach - and architecture-independent and, as such, easily transferable to complicated equipment architectures as Tri-Gate (finFET) units. we advise a actual version to appreciate the intrinsically greater reliability of the MOS method which include a Ge-based channel and a SiO2/HfO2 dielectric stack.

The more suitable reliability homes the following mentioned strongly aid (Si)Ge expertise as a transparent frontrunner for destiny CMOS expertise nodes.

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Read or Download Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications (Springer Series in Advanced Microelectronics) PDF

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